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BYV95A(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size65KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BYV95A(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15,

BYV95A(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BL
FEATURES
GALAXY ELECTRICA
L
BYV95A(Z)---BYV95C(Z)
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIERS
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon, Alcohol,Is opropanol and
sim ilar solvents
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plastic
Term inals: Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces,0.39 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise s pecified.
Single phase,half wave,50Hz,resis tive or inductive load. For capacitive load,derate by 20%.
BYV95A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYV95B
400
280
200
1.5
BYV95C
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.6
5.0
100.0
250
18
45
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0261047
BL
GALAXY ELECTRICAL
1.

BYV95A(Z) Related Products

BYV95A(Z) BYV95B(Z) BYV95C(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15,
Is it Rohs certified? conform to conform to conform to
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
application FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.6 V 1.6 V 1.6 V
JEDEC-95 code DO-15 DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 400 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.25 µs 0.25 µs 0.25 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maker Galaxy Semi-Conductor Co., Ltd. - Galaxy Semi-Conductor Co., Ltd.
Base Number Matches - 1 1

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