EEWORLDEEWORLDEEWORLD

Part Number

Search

B80C1000B

Description
Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size21KB,2 Pages
ManufacturerFagor Electrónica
Environmental Compliance
Download Datasheet Parametric Compare View All

B80C1000B Overview

Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon,

B80C1000B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFagor Electrónica
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PBCY-W4
Humidity sensitivity level1
Maximum non-repetitive peak forward current40 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
B40C1000.......B380C1000
1 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
Voltage
100 to 900 V.
Sufflix
"A"
"B"
L
± 0.5
4
3
Current
1.0 A
®
Ø 0.8
± 0.05
Glass Passivated Junction
Case: Epoxy encapsulation
Terminals: Radial leads
Ideal for P.C.B.
Ø 0.8
± 0.05
Lead and polarity identifications
Maximum Ratings, according to IEC publication No. 134
B40
C1000
B80
C1000
200
140
80
B125
C1000
300
210
125
B250
C1000
600
420
250
B380
C1000
900
630
380
V
RRM
V
RMS
V
R
I
F(AV)
I
FRM
I
FSM
I
2
t
T
j
T
stg
Peak Recurrent Reverse Voltage (V)
Maximum RMS Voltage (V)
Recommended Input Voltage (V)
Forward current at Tamb = 25 °C R load
C load
Recurrent peak forward current
10 ms. peak forward surge current
I
2
t value for fusing (t = 10 ms)
Operating temperature range
Storage temperature range
100
70
40
1.2 A
1.0 A
10 A
40 A
8 A
2
sec
– 40 to + 150 °C
– 40 to + 150 °C
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
Max. forward voltage drop
per element at I
F
= 1 A
Max. reverse current per element at V
RWM
1V
10 µ A
Jan - 00

B80C1000B Related Products

B80C1000B B250C1000B B250C1000A B125C1000A B125C1000B B380C1000B B380C1000A B80C1000A
Description Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 600V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 600V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 300V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 300V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 900V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 900V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 code O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4
Humidity sensitivity level 1 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 40 A 40 A 40 A 40 A 40 A 40 A 40 A 40 A
Number of components 4 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 600 V 600 V 300 V 300 V 900 V 900 V 200 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 398  1932  153  2582  1146  8  39  4  52  24 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号