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BR5008

Description
Bridge Rectifier Diode, 50A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size179KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

BR5008 Overview

Bridge Rectifier Diode, 50A, 800V V(RRM),

BR5008 Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current500 A
Number of components4
Maximum operating temperature150 °C
Maximum output current50 A
Maximum repetitive peak reverse voltage800 V
BR5006 thru BR5016
Glass Passivated Single
Phase Bridge Rectifiers
V
RRM
600 to 1600V
I
FAV
50 Amp
Features
High thermal conductivity packge,
electrically insulated case
Centre hole fixing
Glass passivated chips
High IFSM
Epoxy compound has classification
UL94V-0
Circuit
-
Module Type
TYPE
BR5006
BR5008
BR5010
BR5012
BR5014
BR5016
Maximum Ratings
Symbol
Item
Average forward output current
I
O
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Weight
Forward surge current, max.
Value for fusing
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Bridge(Approximately)
Thermal Characteristics
Item
Symbol
Rth(j-c)
Junction to Case
Bridge
Electrical Characteristics
Symbol
V
FM
I
RD
Item
Forward Voltage Drop, max.
Maximum DC Reverse
Document Number: BR5006 thru BR5016
Sep.20, 2011
~
+
V
RRM
600V
800V
1000V
1200V
1400V
1600V
Applications
Big power supplier
Field supply for DC motor
~
V
RSM
700V
900V
1100V
1300V
1500V
1700V
Conditions
Tc=70℃
t=8.3ms Single Half-Sine-Wave
Superimposed On Rated Load
(JEDEC METHOD)
t=8.3mS VR=0
a.c.50HZ;r.m.s.;1min
Tj=25℃
Tj=125℃
Values
50
500
1000
2500
-55 to +150
-55 to +150
2
25
Units
A
A
A
2
s
V
N.m
g
Conditions
Values
0.5
Units
℃/W
Conditions
T=25℃ I
F
=25.0A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
1
Values
Min.
Typ.
1.00
Max.
1.20
5.0
3.0
Units
V
uA
mA
www.
smsemi.com

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