BR5002W datasheet, PDF - EEWORLD Datasheet

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BR5002W: DescriptionBridge Rectifier Diode,; CategoryDiscrete semiconductor diode; File Size32KB，2 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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BR5002W Overview

Bridge Rectifier Diode,

BR5002W Parametric

Parameter Name	Attribute value
Maker	HY Electronic
Reach Compliance Code	unknown
ECCN code	EAR99
Diode type	BRIDGE RECTIFIER DIODE

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BR10/15/25/35/50A W SERIES

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE

FORWARD CURRENT

BRW

METAL HEAT SINK

1000Volts

10/15/25/35/50Amperes

FEATURES

●

Surge overload -240~500 amperes peak

●

Low forward voltage drop

●

Mounting position: Any

●

Electrically isolated base -2000 Volts

●

Materials used carries U/L recognition

1.200

(30.5)MIN

.442(11.23)

.424(10.77)

.042(1.07)

.038(0.97)

Hole for

No.8 screw

193"(4.9)diam

1.133(28.8)

1.114(28.3)

1.133(28.8)

1.114(28.3)

.732(18.6)

.693(17.6)

.469(11.9)

.429(10.9)

.732(18.6)

.693(17.6)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Resistive or inductive load 60H

For capacitive load current by 20%

BR-W

10005

BR-W

1001

1501

2501

3501

5001

100

BR-W

FSM

240

BR-W

300

BR-W

1002

1502

2502

3502

5002

200

140

BR-W

400

BR-W

1004

1504

2504

3504

5004

400

280

BR-W

1006

1506

2506

3506

5006

600

420

BR-W

1008

1508

2508

3508

5008

800

560

BR-W

1010

1510

2510

3510

5010

1000

700

500

UNIT

CHARACTERISTICS

SYMBOL

15005

25005

35005

50005

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum Average Forward

Rectified Output Current at

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load

Maximum Forward Voltage Drop

Per Element at 5.0/7.5/12.5/17.5/25.0A Peak

Maximum Reverse Current at Rated

DC Blocking Voltage Per Element

Operating Temperature Range

Storage Temperature Range

=25℃

@Tc=55℃

RRM

RMS

(AV)

400

STG

1.1

10.0

-55 to +150

μA

℃

REV. 1, 30-Dec-2011

~ 452 ~

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