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LBCW29LT3G

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size507KB,10 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

LBCW29LT3G Overview

Transistor,

LBCW29LT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
Featrues
Pb-Free Package is Available.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
V
CBO
EBO
2
BASE
LBCW29LT1G
LBCW30LT1G
3
1
1
EMITTER
Value
–32
–32
–5.0
–100
Unit
Vdc
2
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
LBCW29LT1G = C1; LBCW30LT1G = C2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –2.0mAdc, I
E
= 0 )
Collector–Emitter Breakdown Voltage
(I
C
= –100
µAdc,
V
EB
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µAdc,
I
C
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= –32 Vdc, I
E
= 0 )
(V
CB
= –32 Vdc, I
E
= 0, T
A
= 100°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
V
(BR)CEO
–32
Vdc
V
(BR)CES
–32
Vdc
V
(BR)CBO
–32
Vdc
–5.0
Vdc
I
CBO
–100
–10
nAdc
µAdc
1/7

LBCW29LT3G Related Products

LBCW29LT3G LBCW30LT1G LBCW29LT1G LBCW30LT3G
Description Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? conform to conform to conform to conform to
Maker LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 120 215 120 215
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount YES YES YES YES
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