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BCW29R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size397KB,7 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BCW29R Overview

Transistor

BCW29R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)90
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)150 MHz

BCW29R Related Products

BCW29R BCW30R
Description Transistor Transistor
Is it Rohs certified? incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 90 150
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 150 MHz 150 MHz

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