2SC4466
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1693)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
80
6
6
3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
10
max
10
max
80
min
50
min
∗
1.5
max
20
typ
110
typ
V
pF
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=120V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
O(50 to100), P(70 to140), Y(90 to180)
5.45
±0.1
B
C
E
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.3
t
on
(
µ
s)
0.16
typ
t
stg
(
µ
s)
2.60
typ
t
f
(
µ
s)
0.34
typ
5.45
±0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
A
15
0m
A
10
0m
A
80m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on Vo lt a ge V
C E (s at)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4V )
6
20
C o l l e c to r C u r r e n t I
C
( A)
50 m A
C o l l ec to r C u r r e n t I
C
( A)
4
2
4
30mA
125
˚C (
Cas
e Te
25˚C
mp
(Cas
e Tem
)
p)
I
C
= 6 A
4A
2A
0
0
0. 5
1. 0
1.5
0
0
0
0
1
2
3
4
–30˚C
I
B
=10mA
(Case
2
20mA
1
2
1
B as e - Em i t t o r Vo l t a g e V
BE
( V )
Temp
)
2
Co l l ect o r - Em i t t er V ol ta ge V
C E
(V )
Ba se C u r r e nt I
B
( A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
=4 V )
300
D C C u r r e n t G ai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
200
12 5˚ C
D C C ur r en t Ga i n h
FE
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
5
θ
j - a
– t Characteristics
100
2 5˚ C
100
Typ
– 30 ˚ C
50
1
50
0.5
0.3
30
0.02
0. 1
0 .5
1
56
20
0 .0 2
0 .1
0.5
1
56
1
10
1 00
Time t(ms)
10 0 0 2 00 0
C ol l ec t or Cur ren t I
C
(A)
C ol l e ct or C u r r e nt I
C
( A )
f
T
– I
E
Characteristics
(Typical)
( V
C E
=12 V)
40
20
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
30
C oll ec t o r Cu r r e n t I
C
( A )
5
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
10
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
1m
s
ms
10
0m
s
W
ith
Typ
DC
40
In
fin
ite
he
20
at
si
1
0.5
Without Heatsink
Natural Cooling
nk
20
10
Without Heatsink
0
–0.02
0.1
– 0. 1
–1
–6
5
10
50
10 0
Emi t t e r Curre nt I
E
(A )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
3. 5
0
0
25
50
75
100
125
1 50
Am b i e n t T e m p er a t u r e T a( ˚ C )
107
Microcontroller MCU
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