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NXP Semiconductors
Product data sheet
PNP medium frequency transistor
FEATURES
•
Low current (max. 25 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
1
handbook, halfpage
BF824W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BF824W
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING CODE
(1)
F8∗
1
Top view
2
MAM048
2
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−30
−30
−4
−25
−25
200
+150
150
+150
V
V
V
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 15
2
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
rb
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
= 0; V
CE
=
−10
V; f = 1 MHz
V
CE
=
−10
V; f = 100 MHz; note 1
I
C
=
−1
mA
I
C
=
−4
mA
I
C
=
−8
mA
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
250
400
390
−
−
−
−
−
−
25
25
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
BF824W
UNIT
K/W
MAX.
−50
−10
−100
−
−
−900
0.3
UNIT
nA
µA
nA
mV
pF
MHz
MHz
MHz
1999 Apr 15
3
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BF824W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 15
4
Microcontroller MCU
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