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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BSP60; BSP61; BSP62
PNP Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 29
2001 May 31
NXP Semiconductors
Product data sheet
PNP Darlington transistors
FEATURES
•
High current (max. 0.5 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
APPLICATIONS
•
Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp drivers.
DESCRIPTION
PNP Darlington transistor in a SOT223 plastic package.
NPN complements: BSP50, BSP51 and BSP52.
1
Top view
2
4
BSP60; BSP61; BSP62
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
2, 4
1
3
MAM266
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BSP60
BSP61
BSP62
V
CES
collector-emitter voltage
BSP60
BSP61
BSP62
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
V
BE
= 0
−
−
−
−
−
−
−
−
−65
−
−65
−45
−60
−80
−5
−1
−2
−100
1.25
+150
150
+150
V
V
V
V
A
A
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
−60
−80
−90
V
V
V
MIN.
MAX.
UNIT
2001 May 31
2
NXP Semiconductors
Product data sheet
PNP Darlington transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
BSP60; BSP61; BSP62
CONDITIONS
note 1
VALUE
98
17
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CES
PARAMETER
collector cut-off current
BSP60
BSP61
BSP62
I
EBO
h
FE
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
=
−45
V
V
BE
= 0; V
CE
=
−60
V
V
BE
= 0; V
CE
=
−80
V
I
C
= 0; V
EB
=
−4
V
V
CE
=
−10
V; note 1; see Fig.2
I
C
=
−150
mA
I
C
=
−500
mA
V
CEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
I
C
=
−500
mA; I
B
=
−0.5
mA
I
C
=
−500
mA; I
B
=
−0.5
mA;
T
j
= 150
°C
I
C
=
−500
mA; I
B
=
−0.5
mA
I
C
=
−500
mA; V
CE
=
−5
V;
f = 100 MHz
I
Con
=
−500
mA; I
Bon
=
−0.5
mA;
I
Boff
= 0.5 mA
1 000
2 000
−
−
−
−
−
−
−
−
−
200
−
−
−1.3
−1.3
−1.9
−
V
V
V
MHz
−
−
−
−
−
−
−
−
−50
−50
−50
−50
nA
nA
nA
nA
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
BEsat
f
T
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
off
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
turn-on time
turn-off time
−
−
400
1 500
−
−
ns
ns
2001 May 31
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BSP60; BSP61; BSP62
handbook, full pagewidth
6000
MGD839
hFE
5000
4000
3000
2000
1000
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
V
CE
=
−10
V.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−10
V; T = 200
μs;
t
p
= 6
μs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 10 kΩ; R
B
= 10 kΩ; R
C
= 18
Ω.
V
BB
= 1.8 V; V
CC
=
−10.7
V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
2001 May 31
4
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