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BST82T/R

Description
TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size99KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BST82T/R Overview

TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN, FET General Purpose Small Signal

BST82T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)0.175 A
Maximum drain current (ID)0.175 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)6 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
BST82
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BST82 in SOT23.
2. Features
s
s
s
s
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
3. Applications
s
Relay driver
s
High speed line driver
s
Logic level translator.
c
c
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
3
Simplified outline
Symbol
d
source (s)
drain (d)
g
03ab44
1
2
s
03ab30
SOT23
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
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