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BUK116-50S118

Description
TRANSISTOR 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size548KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK116-50S118 Overview

TRANSISTOR 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK116-50S118 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, ESD PROTECTION
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

BUK116-50S118 Related Products

BUK116-50S118 BUK116-50S,118
Description TRANSISTOR 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 50A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET
Maker NXP NXP
package instruction SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, ESD PROTECTION LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V
Maximum drain current (ID) 50 A 50 A
Maximum drain-source on-resistance 0.035 Ω 0.035 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 200 A 200 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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