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BUZ50A-220TM

Description
7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUZ50A-220TM Overview

7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET

BUZ50A-220TM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
package instructionFLANGE MOUNT, R-MSFM-T3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)7.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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