BUZ355 datasheet, PDF - EEWORLD Datasheet

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BUZ355: Description6A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218; CategoryDiscrete semiconductor The transistor; File Size1MB，7 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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BUZ355 Overview

6A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218

BUZ355 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Rochester Electronics
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	720 mJ
Configuration	SINGLE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	21 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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