BUZ353 datasheet, PDF - EEWORLD Datasheet

BUZ353: Description9.5A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218; CategoryDiscrete semiconductor The transistor; File Size112KB，2 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BUZ353 Overview

9.5A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	9.5 A
Maximum drain current (ID)	9.5 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	170 pF
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	38 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	570 ns
Maximum opening time (tons)	195 ns

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