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2N5323-BP

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, ROHS COMPLIANT, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size368KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2N5323-BP Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, ROHS COMPLIANT, METAL CAN-3

2N5323-BP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-39
package instructionROHS COMPLIANT, METAL CAN-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)1000 ns
Maximum opening time (tons)100 ns
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2N5323
Features
10 Watts Power Dissipation.
Metal can case.
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
PNP Silicon
Switching Transistor
TO-39
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
T
J
T
STG
Symbol
P
D
R
JC
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Base Current
Operating Junction Temperature
Storage Temperature
Rating
Total Device Dissipation
O
Derate above 25 C
Thermal Resistance, Junction to Case
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=100mAdc, I
B
=0)
Collector Cutoff Current
(V
CE
=75Vdc, V
EB(off)
=1.5Vdc)
(V
CE
=45Vdc, V
EB(off)
=1.5Vdc, T
C
=150
O
C)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(V
CE
=4.0Vdc, I
C
=500mAdc)
Collector-Emitter Saturation Voltage
(1)
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter On Voltage
(I
C
=500mAdc, V
CE
=4.0Vdc)
Small-signal current gain
(V
CE
=4.0Vdc, I
C
=50mAdc,f=10MHz)
Turn-On Time
(V
CC
=30Vdc, I
C
=500mAdc,I
B1
=50mAdc)
Turn-Off Time
(V
CC
=30Vdc,
I
C
=500mAdc,I
B1
=I
B2
=50mAdc)
(1)
Rating
50
75
5.0
2.0
1.0
-55 to +150
-55 to +150
Max
10
0.057
17.5
Min
Max
Unit
V
V
V
A
A
O
C
O
C
Unit
W
O
mW/ C
O
C/W
Units
Thermal Characteristics
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CEO
I
CEX
50
---
---
---
---
0.1
5.0
0.1
Vdc
mAdc
I
EBO
mAdc
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(on)
40
---
---
250
1.2
1.4
---
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
L
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
.335
.370
8.509
.305
.335
7.747
.240
.260
6.096
.50
.75
12.7
.200
5.08
.029
.045
7.366
-----
.050
-----
.009
.031
0.229
44°
46°
44°
.028
.034
0.711
.016
.021
0.406
SMALL-SIGNAL CHARACTERISTICS
hfe
5.0
---
---
SWITCHING CHARACTERISTICS
ton
toff
---
---
100
1000
ns
ns
MAX
9.40
8.509
6.604
19.05
11.43
1.27
7.874
46°
0.864
0.533
NOTE
-
-
-
7<3
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
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Revision: A
1 of 2
2011/01/01

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