INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2SC3519/A
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
V
(BR)CEO
= 160V(Min)-2SC3519
= 180V(Min)-2SC3519A
·Good
Linearity of h
FE
·Complement
to Type 2SA1386/A
APPLICATIONS
·Designed
for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base
Voltage
V
CEO
Collector-Emitter
Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
2SC3519
160
V
2SC3519A
180
2SC3519
160
V
2SC3519A
180
5
V
15
A
4
A
130
W
℃
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SC3519
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC3519A
Collector-Emitter Saturation Voltage
2SC3519
I
CBO
Collector
Cutoff Current
2SC3519A
I
EBO
h
FE
C
OB
f
T
Emitter Cutoff Current
DC Current Gain
V
CB
= 180V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 5A ; V
CE
= 4V
I
C
= 5.0A; I
B
= 0.5A
V
CB
= 160V; I
E
= 0
I
C
= 25mA ; I
B
= 0
180
CONDITIONS
MIN
160
2SC3519/A
TYP.
MAX
UNIT
V
V
CE
(sat)
2.0
100
V
μA
100
Output Capacitance
Current-Gain—Bandwidth Product
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
w
Y
em
cs
.is
w
w
I
E
= -2A ; V
CE
= 12V
I
C
= 10A ,R
L
= 4Ω,
I
B1
= -I
B2
= 1A,V
CC
=
40V
I
E
= 0; V
CB
= 10V;f
test
= 1.0MHz
.cn
i
50
100
180
250
50
μA
pF
MHz
0.2
1.3
0.45
μs
μs
μs
h
FE
Classifications
O
50-100
P
70-140
90-180
isc Website：www.iscsemi.cn
2
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