Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3679
DESCRIPTION
・With
TO-3PN package
・High
voltage switching transistor
APPLICATIONS
・For
switching regulator and
general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
PARAMETER
Collector-base voltage
导½
半
HA
INC
Base current (DC)
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
900
800
7
5
10
2.5
UNIT
V
V
V
A
A
A
W
℃
℃
Open collector
Collector current (DC)
Collector current -peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
100
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3679
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ;I
B
=0
800
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A; I
B
=0.4A
0.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A ;I
B
=0.4A
1.2
V
I
CBO
Collector cut-off current
V
CB
=800V ;I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=2A ; V
CE
=4V
10
30
f
T
Transition frequency
I
C
=0.5A ; V
CE
=12V
C
OB
Switching times
电半
固
INC
Fall time
Turn-on time
Storage time
Collector output capacitance
导½
f=1MHz;V
CB
=10V
t
on
t
s
ANG
H
MIC
E SE
OR
CT
NDU
O
75
1.0
5.0
6
MHz
pF
μs
I
C
=2.0A
I
B1
=0.3A ,I
B2
=-1A
V
CC
=250V, R
L
=125Ω
μs
t
f
1.0
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3679
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimentions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3679
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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