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2SC3833

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size227KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC3833 Overview

Transistor

2SC3833 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3833
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·High
Switching Speed
·High
Reliability
APPLICATIONS
·Designed
for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
500
V
400
V
10
V
12
A
24
A
4
A
100
W
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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