
Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | TO-66 |
| package instruction | TO-66, 2 PIN |
| Contacts | 2 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 55 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-66 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | MATTE TIN (315) |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 10 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 0.8 MHz |
| Base Number Matches | 1 |
