2N5333LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N5333LEADFREE: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size146KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N5333LEADFREE Overview

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL PACKAGE-3

2N5333LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Maximum off time (toff)	450 ns
Maximum opening time (tons)	150 ns
Base Number Matches	1

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Central

2N5333

PNP SILICON POWER TRANSISTOR

TM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5333 is

a PNP Silicon Power Transistor manufactured

by the epitaxial planar process, mounted in a

hermetically sealed metal case, designed for

amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current (tp < 0.3ms)

Continuous Base Current

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg

Θ

JA

100

80

6.0

2.0

5.0

1.0

-65 to +200

175

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICES

VCE=90V

ICES

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

hfe

fT

ton

toff

VCE=50V (TC=150°C)

VCE=40V

VEB=4.0V

VEB=6.0V

IC=30mA

IC=1.0A, IB=100mA

IC=2.0A, IB=400mA

VCE=4.0V, IC=2.0A

VCE=4.0V, IC=1.0A

VCE=4.0V, IC=2.0A

VCE=10V, IC=1.0A, f=1KHz

30

10

30

150

450

80

MAX

10

500

50

1.0

100

0.45

1.0

1.5

120

UNITS

μA

V

{

VCE=10V, IC=1.0A

IC=1.0A, IB1=IB2=100mA

VBE(OFF)=3.7V, RL=20Ω

}

MHz

ns

R0 (25-September 2008)

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