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2N6676

Description
15A, 300V, NPN, Si, POWER TRANSISTOR, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size234KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2N6676 Overview

15A, 300V, NPN, Si, POWER TRANSISTOR, TO-204AA

2N6676 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-based maximum capacity500 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment175 W
Maximum power dissipation(Abs)175 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Maximum off time (toff)3000 ns
Maximum opening time (tons)700 ns
VCEsat-Max1.5 V
Base Number Matches1

2N6676 Related Products

2N6676
Description 15A, 300V, NPN, Si, POWER TRANSISTOR, TO-204AA
Is it Rohs certified? incompatible
Reach Compliance Code _compli
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 15 A
Collector-based maximum capacity 500 pF
Collector-emitter maximum voltage 300 V
Configuration SINGLE
Minimum DC current gain (hFE) 8
JEDEC-95 code TO-204AA
JESD-30 code O-MBFM-P2
JESD-609 code e0
Number of components 1
Number of terminals 2
Maximum operating temperature 200 °C
Package body material METAL
Package shape ROUND
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Maximum power consumption environment 175 W
Maximum power dissipation(Abs) 175 W
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form PIN/PEG
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 15 MHz
Maximum off time (toff) 3000 ns
Maximum opening time (tons) 700 ns
VCEsat-Max 1.5 V
Base Number Matches 1
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