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BUZ102AL

Description
Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size183KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BUZ102AL Overview

Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

BUZ102AL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)180 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
Maximum pulsed drain current (IDM)168 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUZ 102AL
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 102AL
V
DS
50 V
I
D
42 A
R
DS(on)
0.028
Package
TO-220 AB
Ordering Code
C67078-S1356-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
42
Unit
A
I
D
I
Dpuls
168
T
C
= 97 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
180
dv/dt
6
mJ
I
D
= 42 A,
V
DD
= 25 V,
R
GS
= 25
L
= 102 µH,
T
j
= 25 °C
Reverse diode dv/dt
kV/µs
I
S
= 42 A,
V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
V
GS
V
gs
P
tot
±
14
±
20
V
W
T
C
= 25 °C
200
Semiconductor Group
1
07/96
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