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BD137-16-BP

Description
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size381KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
Download Datasheet Parametric View All

BD137-16-BP Overview

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3

BD137-16-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Parts packaging codeSIP
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
MCC
Micro Commercial Components
TM
)HDWXUHV
available upon request by adding suffix "-HF"
Halogen
free
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BD135-6/10/16
BD137-6/10/16
BD139-6/10/16

0D[LPXP5DWLQJV
Rating
Collector-Emitter Voltage
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
DC Current Gain - h
FE
= 40 (Min) @I
C
= 150mAdc
Complementary with BD136, BD138, BD140
Symbol
BD135
BD137
BD139
V
CEO
Value
45
60
80
45
60
80
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Power Transistors
NPN Silicon
45,60,80 Volts

A
K
N
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @T
A
=25
Derate above 25
Total Device Dissipation @T
C
=25
Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
J
, T
STG
R

-&
R

-$
Vdc
Vdc
Adc
Adc
Watt
mW/
Watt
mW/
E
D

B
M
:
:
:
:
:
:
/W
:
/W
:
:

1
2
3
L
G



(OHFWULFDO &KDUDFWHULVWLFV # 
°
& 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
Parameter
Collector-Emitter Sustaining Voltage*
(I
C
=30mA,I
B
=0) BD135
BD137
BD139
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
(V
CB
=30Vdc, I
E
=0, T
C
=125 )
Emitter Cutoff Current
(V
BE
=5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=5mAdc, V
CE
=2Vdc)
(I
C
=0.5Adc, V
CE
=2Vdc)
(I
C
=150mAdc, V
CE
=2Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter ON Voltage
(V
CE
=2V, I
C=
0.5A)
Min
Max
Units
Vdc
45
60
80
0.1
10
10
µAdc
µAdc
C
2)) &+$5$&7(5,67,&6
BV
CEO
I
CBO
F
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
Q
EMITTER
COLLECTOR
BASE
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(on)
:
J
25
25
40
250
0.5
1
Vdc
Vdc
CLASSIFICATION OF H
FE(3)
Rank
Range
6
40-
100
10
63- 160
16
100-
250










L
M
N
Q
 

0.291
0.417
0.602
4
0.118
0.026
0.046
0.090TYP
0.098
0.083
0.000
0.043
0.018




0.307
0.433
0.618
1
0.126
0.034
0.054
0.114
0.091
0.012
0.059
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
www.mccsemi.com
1 of 3
Revision:
C
2014/01/02

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