WTF4A60
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )
High Junction temperature(T
J
=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
A1
A2
G
TO220F
Absolute Maximum Ratings
(T
=
J
25°C unless otherwise specified)
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
TSM
2
Parame
Repetitive Peak
ter
Off-State Voltage
R.M.S On-State Current
Surge On-State Current
T
J
= 105 °C
Condition
Ratings Units
600
4.0
50Hz
60Hz
30
A
31
5.1
5
A2 s
W
W
A
V
℃
℃
V
A
One cycle, Peak value,
non-repetitiv
e full cycle
It
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T
J
= 125 °C
T
J
= 125 °C
1
4.0
7.0
-40~+150
-40~+150
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Value
4
60
Units
℃/W
℃/W
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
WTF4A60
TF4
Electrical Characteristics
(T
C
=25
℃
unless otherwise noted)
Symbol
I
DRM
/I
RRM
Characteristics
off-state leakage current
(V
AK
= V
DRM
/V
RRM
Single phase, half wave)
Forward “On” voltage (I
T
=5A, Inst. Measurement)
Gate trigger current (continuous dc)
(V
AK
= 6 Vdc, RL = 10 Ω)
Note:1
T2+,G+
T2+,G-
T2-,G-
T2+,G+
T2+,G-
Note:1
Gate threshold Voltage
T2-,G-
T
J
=125℃
TJ=25℃
TJ=125℃
Min
-
-
-
-
-
-
-
-
-
0.2
Typ.
-
-
1.2
-
-
-
-
-
-
-
Max
5
1
1.6
35
35
35
1.5
1.5
1.5
-
Unit
μA
mA
V
V
TM
I
GT
mA
V
GT
Gate Trigger Voltage (Continuous dc) )
(V
AK
= 6 Vdc, RL = 10 Ω)
V
V
GD
Ｖ
Ｄ
=1/2V
DRM
, RL = 3.3K Ω
Critical Rate of Rise of Off-State Voltage at Commutation
V
dv/dt
(V
D
=0.67V
DRM
;gate open)
I
H
I
L
Holding Current
latching current
Note:2
T
J
=125℃
400
-
-
-
-
-
-
35
60
V/μs
mA
mA
Note 1:
minimum IGT is guaranted at 5% of IGT max.
2:
for both polarities of A2 referenced to A1.
2/5
Steady, all for your advance.
advance.
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