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M28C16-150MS1

Description
2KX8 EEPROM 5V, 150ns, PDSO24, 0.300 INCH, PLASTIC, SO-24
Categorystorage    storage   
File Size129KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28C16-150MS1 Overview

2KX8 EEPROM 5V, 150ns, PDSO24, 0.300 INCH, PLASTIC, SO-24

M28C16-150MS1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.300 INCH, PLASTIC, SO-24
Contacts24
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time150 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDSO-G24
JESD-609 codee0
length15.4 mm
memory density16384 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP24,.4
Package shapeRECTANGULAR
Package formSMALL OUTLINE
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height2.65 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
width7.5 mm
M28C16
16K (2K x 8) PARALLEL EEPROM
with SOFTWARE DATA PROTECTION
NOT FOR NEW DESIGN
FAST ACCESS TIME: 90ns
SINGLE 5V
±
10% SUPPLY VOLTAGE
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
– 64 Bytes Page Write Operation
– Byte or Page Write Cycle: 3ms Max
ENHANCED END OF WRITE DETECTION:
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY:
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
SOFTWARE DATA PROTECTION
M28C16 is replaced by the products
described on the document M28C16A
DESCRIPTION
The M28C16 is a 2K x 8 low power Parallel
EEPROM fabricatedwith SGS-THOMSON proprie-
tary single polysilicon CMOS technology. The de-
vice offers fast access time with low power
dissipation and requires a 5V power supply. The
circuit has been designed to offer a flexible micro-
controller interface featuring both hardware and
software handshaking with Data Polling and Toggle
Bit. The M28C16 supports 64 byte page write op-
eration. A Software Data Protection (SDP) is also
possible using the standard JEDEC algorithm.
Table 1. Signal Names
A0 - A10
DQ0 - DQ7
W
E
G
RB
V
CC
V
SS
Address Input
Data Input / Output
Write Enable
Chip Enable
Output Enable
Ready / Busy
Supply Voltage
Ground
24
1
PDIP24 (P)
PLCC32 (K)
24
1
SO24 (MS)
300 mils
TSOP28 (N)
8 x13.4mm
Figure 1. Logic Diagram
VCC
11
A0-A10
8
DQ0-DQ7
W
E
G
M28C16
RB *
VSS
AI01518B
Note:
* RB function is offered only with TSOP28 package.
November 1997
This is information on a product still in production bu t not recommended for new de sign.
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