MB2M-MB10M
SILICON BRIDGE RECTIFIERS
MBM
A
Dim
A
Min
4.40
3.40
2.35
0.15
4.60
0.50
5.70
2.30
5.40
All Dimensions in mm
Max
4.80
3.80
2.65
0.35
5.20
0.80
6.30
2.70
5.90
FEATURES
Glass passivated chip junctions
High surge overload rating: 35A peak
Saves space on printed circuit boards
Plastic material has U/L flammability classification94V-O
C
-
+
B
B
C
E
L
~
~
F
I
F
I
E
J
K
L
K
J
This series is UL recognized under Component Index, file number E239431
High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Maximum Ratings
(@TA = 25°C unless otherwise specified)
Characteristic
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Maximum average forward Output current
@T
A
=25℃
Peak forward surge current
8.3ms single half-sine-
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
2
MB2M
200
140
200
MB4M
400
280
400
MB6M
600
420
600
0.5
1)
2)
MB8M
800
560
800
MB10M
1000
700
1000
UNITS
V
V
V
A
0.8
wave superimposed on rated load
Current squared time t < 8.3ms , Ta = 25℃
35
5.1
2
A
As
Thermal Characteristics
Characteristic
Typical junction capacitance per leg
Typical thermal resistance per leg
(NOTE 3)
(NOTE 1)
(NOTE 2)
Operating junction temperature range
Storage temperature range
Symbol
C
J
R
ΘJA
R
θ
JL
T
J
T
STG
MB2M
MB4M
MB6M
13
85
20
- 55 ---- + 150
- 55 ---- + 150
MB8M
MB10M
UNITS
pF
℃/W
℃
℃
Electrical Characteristics
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage at 0.4 A
Maximum reverse current @T
A
=25℃
at rated DC blocking voltage @T
A
=125℃
Symbol
V
F
I
R
MB2M
MB4M
MB6M
1.0
5.0
100
MB8M
MB10M
UNITS
V
μ
A
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
ht
t
p
:
//
Revision:20170701-P1
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