SDT6411 datasheet, PDF - EEWORLD Datasheet

SDT6411: DescriptionPower Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin, TO-111/I, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size663KB，11 Pages; ManufacturerSolitron Devices Inc.

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SDT6411 Overview

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin, TO-111/I, 4 PIN

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Solitron Devices Inc.
Parts packaging code	TO-111
package instruction	TO-111/I, 4 PIN
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	O-MUPM-D4
Number of components	1
Number of terminals	4
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	52 W
Maximum power dissipation(Abs)	52 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	0.5 V

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