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AR25KB0G

Description
Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size359KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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AR25KB0G Overview

Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon,

AR25KB0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionO-PEDB-N2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PEDB-N2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
Maximum reverse recovery time3 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
AR25A thru AR25M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Diffused junction
- Low leakage
- High surge capability
- Low cost construction utilizing void-free molded plastic technique
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
High Current Button Rectifiers
MECHANICAL DATA
Case:
AR
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.8 g (approximately)
AR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 25 A
Maximum reverse current @ Rated VR T
J
=25
o
C
T
J
=125
o
C
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical Thermal Resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Time Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
trr
Cj
R
θJC
T
J
T
STG
AR
25A
50
35
50
AR
25B
100
70
100
AR
25D
200
140
200
AR
25G
400
280
400
25
400
1.0
5
250
3
300
1
- 50 to +175
- 50 to +175
O
AR
25J
600
420
600
AR
25K
800
560
800
AR
25M
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
C/W
O
O
C
C
Document Number: DS_D1409003
Version: D14

AR25KB0G Related Products

AR25KB0G AR25DB0 AR25DB0G AR25GB0 AR25JB0G
Description Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon,
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
package instruction O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V
JESD-30 code O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 25 A 25 A 25 A 25 A 25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 800 V 200 V 200 V 400 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 3 µs 3 µs 3 µs 3 µs 3 µs
surface mount YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END END

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