HY62UF16404C-DM70I datasheet, PDF

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HY62UF16404C-DM70I: DescriptionStandard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48; Categorystorage storage; File Size127KB，10 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY62UF16404C-DM70I Overview

Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48

HY62UF16404C-DM70I Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	BGA
package instruction	VFBGA, BGA48,6X8,30
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	8.4 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
power supply	3 V
Certification status	Not Qualified
Maximum seat height	0.95 mm
Minimum standby current	1.2 V
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	6.8 mm

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HY62UF16404C Series

256Kx16bit full CMOS SRAM

Document Title

256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM

Revision History

Revision No

History

Initial Draft

Part No Change

85ns Part Delete

Marking Information add

tBLZ value is changed (10ns -> 5ns at 70ns Speed)

tBLZ / tOLZ value is changed

Icc1 value is changed

Output Load is redefined

Isb, Isb1, Vdr ,Iccdr are redefined

Changed Logo

Changed Isb1 values

Draft Date

Jul.06.2000

Oct.30.2000

Remark

Preliminary

Dec.02.2000

Preliminary

Dec.15.2000

Final

Mar.23.2001

Jun.07.2001

Final

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev.05 / Jun.01

Hynix Semiconductor

HY62UF16404C-DM70I Related Products

	HY62UF16404C-DM70I	HY62UF16404C-SM70I	HY62UF16404C-SM55I	HY62UF16404C-DM55I
Description	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30
Contacts	48	48	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	70 ns	70 ns	55 ns	55 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
JESD-609 code	e1	e1	e1	e1
length	8.4 mm	8.4 mm	8.4 mm	8.4 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	48	48	48	48
word count	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	256KX16	256KX16	256KX16	256KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA
Encapsulate equivalent code	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	3 V	3 V	3 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	0.95 mm	0.95 mm	0.95 mm	0.95 mm
Minimum standby current	1.2 V	1.2 V	1.2 V	1.2 V
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	6.8 mm	6.8 mm	6.8 mm	6.8 mm

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