HY62UF16800B-DF85C datasheet, PDF

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HY62UF16800B-DF85C: DescriptionStandard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48; Categorystorage storage; File Size244KB，11 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY62UF16800B-DF85C Overview

Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48

HY62UF16800B-DF85C Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	85 ns
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	8.5 mm
memory density	8388608 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.1 mm
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	6 mm

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HY62UF16800B Series

512Kx16bit full CMOS SRAM

Document Title

512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM

Revision History

Revision No

History

Initial Release

DC Para Change

Icc

4mA

Icc1(Min) 40mA

Icc1(1us)

8mA

Isb

0.1mA

Isb1

25uA

Iccdr

12uA

Pin Connection

E3 DNU

E3 NC

Draft Date

May.29.2001

Mar.20.2002

3mA

20mA

2mA

0.3mA

15uA

6uA

Apr.10.2002

Remark

Preliminary

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.02 / Apr. 2002

Hynix Semiconductor

HY62UF16800B-DF85C Related Products

	HY62UF16800B-DF85C	HY62UF16800B-DF55I	HY62UF16800B-DF55C	HY62UF16800B-DF85I	HY62UF16800B-DF70C	HY62UF16800B-DF70I
Description	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, FBGA-48	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, FBGA-48	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, FBGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, FBGA-48
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,
Contacts	48	48	48	48	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	85 ns	55 ns	55 ns	85 ns	70 ns	70 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
JESD-609 code	e1	e1	e1	e1	e1	e1
length	8.5 mm	8.5 mm	8.5 mm	8.5 mm	8.5 mm	8.5 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of terminals	48	48	48	48	48	48
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C
organize	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm
Maximum supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	6 mm	6 mm	6 mm	6 mm	6 mm	6 mm

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