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2N6431LEADFREE

Description
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
CategoryDiscrete semiconductor    The transistor   
File Size898KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N6431LEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

2N6431LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
2N6430 2N6431
2N6432 2N6433
NPN
PNP
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6430 series
devices are complementary small signal silicon
transistors manufactured by the epitaxial planar
process, designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (NPN)
Emitter-Base Voltage (PNP)
Continuous Collector Current
Power Dissipation (TC=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
2N6430
2N6432
200
200
6.0
5.0
100
1.8
500
-65 to +200
0.35
97.2
2N6431
2N6433
300
300
UNITS
V
V
V
V
mA
W
mW
°C
°C/mW
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N6430
2N6431
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=160V (2N6430, 2N6432)
-
100
ICBO
VCB=200V (2N6431, 2N6433)
-
100
IEBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
VEB=4.0V
VEB=3.0V
IC=100μA (2N6430, 2N6432)
IC=100μA (2N6431, 2N6433)
IC=1.0mA (2N6430, 2N6432)
IC=1.0mA (2N6431, 2N6433)
IE=100μA
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
-
-
200
300
200
300
6.0
-
-
25
40
50
100
-
-
-
-
-
-
0.5
0.9
-
-
200
2N6432
2N6433
MIN
MAX
-
250
-
-
-
200
300
200
300
5.0
-
-
25
40
30
250
-
100
-
-
-
-
-
0.5
0.9
-
-
150
UNITS
nA
nA
nA
nA
V
V
V
V
V
V
V
R1 (26-July 2013)

2N6431LEADFREE Related Products

2N6431LEADFREE 2N6432LEADFREE
Description Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 300 V 200 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 30
JEDEC-95 code TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN (315) MATTE TIN (315)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 10
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
Base Number Matches 1 1
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