2N6430 2N6431
2N6432 2N6433
NPN
PNP
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6430 series
devices are complementary small signal silicon
transistors manufactured by the epitaxial planar
process, designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (NPN)
Emitter-Base Voltage (PNP)
Continuous Collector Current
Power Dissipation (TC=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
2N6430
2N6432
200
200
6.0
5.0
100
1.8
500
-65 to +200
0.35
97.2
2N6431
2N6433
300
300
UNITS
V
V
V
V
mA
W
mW
°C
°C/mW
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N6430
2N6431
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=160V (2N6430, 2N6432)
-
100
ICBO
VCB=200V (2N6431, 2N6433)
-
100
IEBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
VEB=4.0V
VEB=3.0V
IC=100μA (2N6430, 2N6432)
IC=100μA (2N6431, 2N6433)
IC=1.0mA (2N6430, 2N6432)
IC=1.0mA (2N6431, 2N6433)
IE=100μA
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
-
-
200
300
200
300
6.0
-
-
25
40
50
100
-
-
-
-
-
-
0.5
0.9
-
-
200
2N6432
2N6433
MIN
MAX
-
250
-
-
-
200
300
200
300
5.0
-
-
25
40
30
250
-
100
-
-
-
-
-
0.5
0.9
-
-
150
UNITS
nA
nA
nA
nA
V
V
V
V
V
V
V
R1 (26-July 2013)
2N6430 2N6431
2N6432 2N6433
NPN
PNP
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
2N6430
2N6432
2N6431
2N6433
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
fT
VCE=20V, IC=10mA, f=100MHz
50
200
-
-
fT
VCE=20V, IC=10mA, f=20MHz
-
-
50
-
Cob
VCB=20V, IE=0, f=1.0MHz
-
4.0
-
6.0
UNITS
MHz
MHz
pF
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (26-July 2013)
w w w. c e n t r a l s e m i . c o m