PolarHT
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXFH69N30P
IXFK69N30P
R
DS(on)
t
rr
V
DSS
I
D25
= 300 V
= 69 A
= 49
mΩ
Ω
≤
200
ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 4
Ω
T
C
= 25°C
Maximum Ratings
300
300
±20
±30
69
200
69
50
1.5
10
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-247 (IXFH)
G
D (TAB)
D
S
TO-264 (IXFK)
G
D
D (TAB)
S
D = Drain
TAB = Drain
G = Gate
S = Source
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
300
1.13/10 Nm/lb.in.
6
10
g
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±100
25
250
49
V
V
nA
µA
µA
mΩ
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
DS99220(12/04)
IXFH 69N30P
IXFK 69N30P
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
30
48
4960
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
760
190
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 4
Ω
(External)
25
75
27
156
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
79
S
1
2
3
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
pF
pF
pF
ns
ns
ns
ns
180 nC
nC
nC
0.25 K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
(TO-247)
(TO-264)
0.21
0.15
K/W
K/W
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
typ.
Max.
69
200
1.5
100
500
A
A
V
Millimeter
Min.
Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 AA Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A
-di/dt = 100 A/µs
V
R
= 100 V
200 ns
nC
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
6,727,585
6,759,692
6771478 B2
Min.
Inches
Max.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXFH 69N30P
IXFK 69N30P
Fig. 1. Output Characte ris tics
@ 25 De g. C
70
60
50
V
GS
= 10V
8V
7V
180
160
140
V
GS
= 10V
9V
8V
Fig. 2. Extende d Output Characteris tics
@ 25 deg. C
I
D
- Amperes
40
30
6V
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
I
D
- Amperes
120
100
80
60
40
6V
7V
5V
20
0
0
2
4
6
8
10
12
5V
14
16
18
20
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
70
60
50
V
GS
= 10V
8V
7V
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0
0
1
2
3
4
5
6
7
8
0.4
-50
-25
0
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on)
Norm alized to I
D25
Value vs .
Junction Tem perature
40
6V
30
20
10
R
D S (on)
- Normalized
I
D
- Amperes
I
D
= 69A
I
D
= 34.5A
5V
25
50
75
100
125
150
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
3.8
3.4
V
GS
= 10V
70
60
50
T
J
- Degrees Centigrade
Fig. 6. Drain Curre nt vs. Case
Te m pe rature
R
D S (on)
- Normalized
3
2.6
2.2
1.8
1.4
1
0.6
0
20
40
60
80
100
120
140
160
180
T
J
= 25ºC
T
J
= 125ºC
I
D
- Amperes
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
© 2004 IXYS All rights reserved
T
C
- Degrees Centigrade
IXFH 69N30P
IXFK 69N30P
Fig. 7. Input Adm ittance
100
90
80
100
90
80
Fig. 8. Transconductance
I
D
- Amperes
60
50
40
30
20
10
0
4
4.5
5
5.5
6
6.5
7
T
J
= 125ºC
25ºC
-40ºC
g
f s
- Siemens
70
70
60
50
40
30
20
10
0
0
T
J
= -40ºC
25ºC
125ºC
20
40
60
80
100
120
140
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
180
160
10
9
8
7
V
DS
= 150V
I
D
= 34.5A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
140
V
G S
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
120
100
80
60
40
20
0
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
S D
- Volts
Fig. 11. Capacitance
10000
f = 1MHz
C iss
1000
R
DS
(on)
Limit
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias Safe
Operating Area
T
C
= 25ºC
Capacitance - pF
I
D
- Amperes
100
1ms
10ms
10
DC
25µs
1000
C oss
C rss
100
0
5
10
15
1
IXYS reserves the right to change limits, test conditions, and dimensions.
V
D S
- Volts
20
25
30
35
40
10
V
D S
- Volts
100
1000
IXFH 69N30P
IXFK 69N30P
Fig. 13. Maxim um Transient Therm al Resistance
1.00
R
(th) J C
- (ºC/W)
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
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