2N6029LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N6029LEADFREE: DescriptionPower Bipolar Transistor, 16A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size485KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N6029LEADFREE Overview

Power Bipolar Transistor, 16A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N6029LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	16 A
Collector-based maximum capacity	1000 pF
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
VCEsat-Max	2 V
Base Number Matches	1

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2N5629 2N5630

2N6029 2N6030

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5629, 2N6029

series devices are complementary silicon power

transistors, manufactured by the epitaxial base

process, designed for high voltage and high power

amplifier applications.

MARKING: FULL PART NUMBER

TO-3 CASE

2N5629

2N6029

100

2N5630

2N6030

120

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEX

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

hfe

Cob

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg



7.0

5.0

200

-65 to +200

0.875

UNITS

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=Rated VCBO

VCE=Rated VCEO, VEB=1.5V

VCE=Rated VCEO, VEB=1.5V, TC=150°C

VCE=½Rated VCEO

VEB=7.0V

IC=200mA (2N5629, 2N6029)

IC=200mA (2N5630, 2N6030)

IC=10A, IB=1.0A

IC=16A, IB=4.0A

IC=10A, IB=1.0A

VCE=2.0V, IC=8.0A

VCE=2.0V, IC=8.0A (2N5629, 2N6029)

VCE=2.0V, IC=8.0A (2N5630, 2N6030)

VCE=2.0V, IC=16A

VCE=10V, IC=4.0A, f=1.0kHz

VCE=20V, IC=1.0A, f=500kHz

VCB=10V, IE=0, f=100kHz (NPN)

VCB=10V, IE=0, f=100kHz (PNP)

4.0

1.0

100

120

MAX

1.0

5.0

1.0

UNITS

1.0

2.0

1.8

1.5

100

500

1.0

MHz

R1 (19-March 2014)

2N6029LEADFREE Related Products

	2N6029LEADFREE	2N6030LEADFREE	2N5629LEADFREE
Description	Power Bipolar Transistor, 16A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 16A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	TO-3, 2 PIN
Reach Compliance Code	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	16 A	16 A	16 A
Collector-based maximum capacity	1000 pF	1000 pF	500 pF
Collector-emitter maximum voltage	100 V	120 V	100 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	20	25
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	PNP	PNP	NPN
Maximum power dissipation(Abs)	200 W	200 W	200 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1 MHz	1 MHz	1 MHz
VCEsat-Max	2 V	2 V	2 V
Base Number Matches	1	1	1
Parts packaging code	TO-204AA	-	TO-204AA
Contacts	2	-	2

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