2N5956LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N5956LEADFREE: DescriptionPower Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2; CategoryDiscrete semiconductor The transistor; File Size428KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N5956LEADFREE Overview

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2

2N5956LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-66
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	5 MHz
VCEsat-Max	2 V
Base Number Matches	1

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2N5954 2N5955 2N5956

2N6372 2N6373 2N6374

PNP

NPN

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5954 and

2N6372 SERIES types are complementary Silicon

Power Transistors manufactured by the epitaxial base

process, mounted in a hermetically sealed metal case

designed for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-66 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEV

VCER

VCEO

VEBO

TJ, Tstg

2N5954

2N6372

2N5955

2N6373

5.0

6.0

2.0

-65 to +200

4.3

2N5956

2N6374

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

2N5954

2N5955

2N6372

2N6373

SYMBOL

TEST CONDITIONS

MIN MAX MIN MAX

ICEV

VCE=85V, VBE=1.5V, RBE=100Ω

100

ICEV

VCE=65V, VBE=1.5V, RBE=100Ω

100

ICEV

VCE=45V, VBE=1.5V, RBE=100Ω

ICEV

VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C -

2.0

ICEV

VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C -

2.0

ICEV

ICER

ICEO

IEBO

BVCEV

BVCER

BVCEO

VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C

VCE=75V

VCE=55V

VCE=35V

VCE=65V

VCE=45V

VCE=25V

VBE=5.0V

IC=100mA, VBE=1.5V, RBE=100Ω

IC=100mA, RBE=100Ω

IC=100mA

100

1.0

0.1

100

1.0

0.1

2N5956

2N6374

MIN MAX

100

2.0

100

1.0

0.1

UNITS

μA

R1 (24-November 2010)

2N5956LEADFREE Related Products

	2N5956LEADFREE	2N5954LEADFREE	2N5955LEADFREE	2N6372LEADFREE	2N6373LEADFREE	2N6374LEADFREE
Description	Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2	Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-66	TO-66	TO-66	TO-66	TO-66	TO-66
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Contacts	2	2	2	2	2	2
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	6 A	6 A	6 A	6 A	6 A	6 A
Collector-emitter maximum voltage	40 V	80 V	60 V	80 V	60 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	5	5	5	5	5
JEDEC-95 code	TO-66	TO-66	TO-66	TO-66	TO-66	TO-66
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W	40 W	40 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	5 MHz	5 MHz	5 MHz	4 MHz	4 MHz	4 MHz
VCEsat-Max	2 V	2 V	2 V	2 V	2 V	2 V
Base Number Matches	1	1	1	1	1	1

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