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2N5880

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size395KB,5 Pages
ManufacturerAdvanced Semiconductor, Inc.
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Transistor

2N5880 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)15 A
ConfigurationSingle
Minimum DC current gain (hFE)20
Maximum operating temperature200 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)160 W
surface mountNO
Nominal transition frequency (fT)4 MHz
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