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2N6288-6201

Description
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AA, Plastic/Epoxy, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size483KB,9 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

2N6288-6201 Overview

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AA, Plastic/Epoxy, 2 Pin

2N6288-6201 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-based maximum capacity250 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)2.3
JEDEC-95 codeTO-220AA
JESD-30 codeR-PSFM-T2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max3.5 V
Base Number Matches1
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