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2SA1104

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size88KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SA1104 Overview

Transistor

2SA1104 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1104
DESCRIPTION
·With
TO-3PN package
·High
frequency
·High
power dissipation
APPLICATIONS
·For
use in audio and general
purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-6
-8
80
150
-55~150
UNIT
V
V
V
A
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