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BZG04C9V1-TR

Description
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SIMILAR TO SMA, 2 PIN, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size142KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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BZG04C9V1-TR Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SIMILAR TO SMA, 2 PIN, Transient Suppressor

BZG04C9V1-TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage10.4 V
Breakdown voltage nominal value10.4 V
Maximum clamping voltage15.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage9.1 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
VISHAY
BZG04C...
Vishay Semiconductors
Silicon Zener Diodes with surge Current Specificaton
Features
Glass passivated junction
High reliability
Stand-off Voltage range 8.2 V to 220 V
Excellent clamping cabability
Fast response time (typ.
1 ps from 0 to V
Zmin
)
15811
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case:
DO214AC
Weight:
77 mg
Packaging Codes/Options:
TR / 1.5k 7 " reel
TR3 / 6k 13 " reel 6k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
R
thJA
< 25 K/W, T
amb
= 100 °C
R
thJA
< 100 K/W, T
amb
= 50 °C
Non repetitive peak surge power t
p
= 10/1000
µs
sq.pulse,
dissipation
T
j
= 25 °C prior to surge
Peak forward surge current
10 ms single half sine wave
Junction temperature
Storage temperature range
Symbol
P
Diss
P
Diss
P
ZSM
I
FSM
T
j
T
stg
Value
3
1.25
300
50
150
- 65 to + 150
Unit
W
W
W
A
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction lead
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 1a
mounted on epoxy-glass hard
tissue, Fig. 1b
mounted on Al-oxid-ceramic
(Al
2
O
3
), Fig. 1b
Test condition
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
Document Number 85594
Rev. 2.0, 15-Oct-03
www.vishay.com
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