2N3716LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N3716LEADFREE: DescriptionPower Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size485KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N3716LEADFREE Overview

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N3716LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-204AA
package instruction	TO-3, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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2N3713

2N3714

2N3715

2N3716

w w w. c e n t r a l s e m i . c o m

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,

2N3715, and 2N3716 are silicon NPN power transistors

manufactured by the epitaxial-base process, mounted

in a hermetically sealed metal package designed for

medium speed switching and amplifier applications.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICEV

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

2N3713

2N3715

7.0

4.0

150

-65 to +200

1.17

2N3714

2N3716

100

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg



UNITS

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

TYP

VCE=Rated VCBO, VBE=1.5V

VCE=Rated VCEO, VBE=1.5V, TC=150°C

VEB=7.0V

IC=200mA (2N3713, 2N3715)

IC=200mA (2N3714, 2N3716)

IC=5.0A, IB=0.5A (2N3713, 2N3714)

IC=5.0A, IB=0.5A (2N3715, 2N3716)

IC=5.0A, IB=0.5A (2N3713, 2N3714)

IC=5.0A, IB=0.5A (2N3715, 2N3716)

VCE=2.0V, IC=3.0A

VCE=2.0V, IC=1.0A (2N3713, 2N3714)

VCE=2.0V, IC=1.0A (2N3715, 2N3716)

VCE=2.0V, IC=3.0A (2N3713, 2N3714)

VCE=2.0V, IC=3.0A (2N3715, 2N3716)

VCE=10V, IC=0.5A, f=1.0MHz

IC=5.0A, IB1=IB2=0.5A

4.0

0.4

0.3

0.4

MAX

1.0

5.0

UNITS

1.0

0.8

2.0

1.5

120

150

MHz

μs

R2 (18-June 2013)

2N3716LEADFREE Related Products

	2N3716LEADFREE	2N3713LEADFREE	2N3714LEADFREE	2N3715LEADFREE
Description	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	TO-204AA	TO-204AA	TO-204AA	TO-204AA
package instruction	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN
Contacts	2	2	2	2
Reach Compliance Code	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A	10 A
Collector-emitter maximum voltage	80 V	60 V	80 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	15	15	30
JEDEC-95 code	TO-3	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz	4 MHz
Base Number Matches	1	1	1	1

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