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SMF70A

Description
200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
CategoryDiscrete semiconductor    diode   
File Size131KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB

SMF70A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
SMF5.0A - SMF170A
Stand- off Voltage :
5 to 170 V
Peak Power :
200 W
FEATURES :
* Stand-off voltage ; 5 - 170 Volts
* Peak Power ; - 200 Watts @ 1 ms (SMF5.0A - SMF58A)
- 175 Watts @ 1 ms (SMF60A - SMF170A)
* Maximum clamp voltage @ Peak pulse current
* Low leakage
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
SOD-123FL
2.5(0.098)
2.9(0.114)
1.55(0.061)
1.95(0.077)
0.6(0.024)
1.0(0.039)
0.05(0.002)
0.25(0.010)
0.5(0.020)
1.1(0.043)
max0.1(0.004)
3.5(0.138)
3.9(0.154)
* Pb Free / RoHS Compliant
MECHANICAL DATA :
* Case: JEDEC SOD-123FL, molded plastic
over passivated chip
* Terminals: Solder Plated, solderable per
MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting position : Any
* Weight: 0.006 ounces, 0.02 gram
0.8(0.031)
1.2(0.047)
Dimensions in millimeters
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum P
PK
Dissipation (PW - 10/1000
μs)
(Note 1)
SMF60A - SMF170A
SMF5.0A - SMF58A
Symbol
P
PK
P
PK
P
D
Value
175
200
1000
385
4.0
Unit
W
W
W
mW
mW/ °C
°C/W
°C/W
°C
Maximum P
PK
Dissipation @ Ta = 25 °C (PW - 8/10
μs)
(Note 2)
DC Power Dissipation @ Ta = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Lead (Note 3)
Operating Junction and Storage Temperature Range
Notes :
(1) Non−repetitive current pulse at Ta = 25°C, per waveform of Fig. 2.
(Note 3)
R
ӨJA
R
ӨJL
T
J
, T
STG
325
26
-55 to +150
(2) Non−repetitive current pulse at Ta = 25°C, per waveform of Fig. 5.
(3) Mounted with recommended minimum pad size, DC board FR
−4.
Page 1 of 3
Rev. 02 : January 12, 2009
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