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JANTX1N973D-1

Description
Zener Diode, 33V V(Z), 1%, 0.4W,
CategoryDiscrete semiconductor    diode   
File Size207KB,27 Pages
ManufacturerAeroflex Metelics / Hi-Rel Components
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Zener Diode, 33V V(Z), 1%, 0.4W,

JANTX1N973D-1 Parametric

Parameter NameAttribute value
MakerAeroflex Metelics / Hi-Rel Components
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance58 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.4 W
Nominal reference voltage33 V
surface mountNO
Maximum voltage tolerance1%
Working test current3.8 mA
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 October 2006.
INCH-POUND
MIL-PRF-19500/117P
25 July 2006
SUPERSEDING
MIL-PRF-19500/117N
6 October 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH
1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1
THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided
for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for
each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and
as follows:
a. P
TL
= 500 mW, (DO-35) at T
L
= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175°C.
b. P
TEC
= 500 mW, (DO-213AA) at T
EC
= +125°C, derate to 0 at +175°C. -65°C
T
J
+175°C; -65°C
T
STG
+175°C.
c. P
T(PCB)
= 400mW, T
A
= 55°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil.
AMSC N/A
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