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RH1B

Description
0.6 A, 800 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

RH1B Overview

0.6 A, 800 V, SILICON, SIGNAL DIODE

RH1B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RH1 - RH1C
PRV : 400 - 1000 Volts
Io : 0.6 Ampere
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY
RECTIFIER DIODES
D2
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current
,Ta = 50°C
SYMBOL
V
RRM
V
RSM
I
F(AV)
RH1
400
450
RH1A RH1B RH1C
600
650
0.6
800
850
1000
1050
UNIT
V
V
A
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at I
F
= 0.6 A
Maximum Reverse Current at V
R
= V
RM
Maximum Reverse Current at V
R
= V
RM
Ta = 25
°C
Ta = 150
°C
I
FSM
V
F
I
R
I
R(H)
Trr
T
J
T
STG
35
1.3
5.0
70
4.0
- 40 to + 150
- 40 to + 150
A
V
µA
µA
µs
°C
°C
Maximum Reverse Recovery Time (Note 1)
Junction Temperature Range
Storage Temperature Range
Note :
( 1 ) Reverse Recovery Test Conditions : I
F
= 10 mA, I
RP
= 10 mA.
Page 1 of 2
Rev. 02 : March 25, 2005

RH1B Related Products

RH1B RH1 RH1A RH1C
Description 0.6 A, 800 V, SILICON, SIGNAL DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE 0.6 A, 600 V, SILICON, SIGNAL DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE
Is it lead-free? Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to conform to
Maker EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli - compli compli
ECCN code EAR99 - EAR99 EAR99
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED

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