DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3C to NNCD12C
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(150 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3C to NNCD12C Series are into 2PIN Ultra Super
Mini Mold Package having allowable power dissipation of 150 mW.
PACKAGE DIMENSIONS
(in millimeters)
2.1 ± 0.1
1.3 ± 0.1
0.3 ± 0.05
0.8 ± 0.1
0.15
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
Cathode
Indication
APPLICATIONS
0 ± 0.05
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
150 mW
85 W (t
T
= 10
µ
s 1 pulse)
150
°C
–55
°C
to +150
°C
Fig. 6
Document No. D11771EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
0.11
+0.05
–0.01
• External interface circuit E.S.D protection.
0.7 ± 0.1
1996
NNCD3.3C to NNCD12C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Dynamic
Impedance
Note 2
Zz (Ω)
MAX.
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
Note 1
V
BR
(V)
Type Number
MIN.
NNCD3.3C
NNCD3.6C
NNCD3.9C
NNCD4.3C
NNCD4.7C
NNCD5.1C
NNCD5.6C
NNCD6.2C
NNCD6.8C
NNCD7.5C
NNCD8.2C
NNCD9.1C
NNCD10C
NNCD11C
NNCD12C
3.10
3.40
3.70
4.00
4.40
4.82
5.29
5.84
6.44
7.03
7.73
8.53
9.42
10.40
11.38
MAX.
3.50
3.80
4.10
4.49
4.92
5.39
5.94
6.55
7.17
7.87
8.67
9.58
10.58
11.60
12.64
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Reverse Leakage
I
R
(
µ
A)
Capacitance
C
t
(pF)
TEST
CONDITION
E.S.D Voltage
(kV)
TEST
CONDITION
MAX.
20
10
10
10
10
5
5
5
2
2
2
2
2
2
2
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
MIN.
30
30
30
30
30
30
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
V
R
= 0 V
f = 1 MHz
30
30
30
30
30
30
30
30
30
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
NNCD3.3C to NNCD12C
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
200
30
×
30
×
0.75
P.C.B. (Ceramic)
P - Power Dissipation - mW
150
20
×
15
×
0.75
P.C.B. (Ceramic)
10
×
7.5
×
0.75
P.C.B. (Ceramic)
100
10
×
7.5
×
0.75
P.C.B. (Glass Epoxy)
50
0
0
50
100
150
200
T
A
- Ambient Temperature - °C
Fig. 2 I
T
- V
BR
CHARACTERISTICS
NNCD7.5C
NNCD8.2C
NNCD6.8C
NNCD9.1C
Fig. 3 I
T
- V
BR
CHARACTERISTICS
100 m
NNCD3.3C
NNCD3.6C
10 m NNCD3.9C
NNCD4.3C
I
T
- On State Current - A
1m
NNCD4.7C
100
µ
10
µ
1
µ
100 n
10 n
1n
NNCD5.1C
100 m
10 m
I
T
- On State Current - A
1m
100
µ
10
µ
1
µ
100 n
10 n
1n
NNCD11C
NNCD10C
NNCD12C
NNCD5.6C
NNCD6.2C
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
V
BR
- Breakdown Voltage - V
V
BR
- Breakdown Voltage - V
3
NNCD3.3C to NNCD12C
Fig. 4 Z
Z
- I
T
CHARACTERISTICS
1 000
TYP.
Z
Z
- Dynamic Impedance -
Ω
100
NNCD5.6C
NNCD3.9C
NNCD4.7C
NNCD5.1C
NNCD10C
10
NNCD7.5C
1
0.1
1
10
100
I
T
- On State Current - mA
Fig. 5 TRANSIENT THERMAL IMPEDANCE
5 000
Z
th
- Transient Thermal Impedance - °C/W
1 000
NNCD [ ] C
833 °C/W
100
10
5
1m
10 m
100 m
1
t - Time - s
10
100
Fig. 6 SURGE REVERSE POWER RATING
1 000
T
A
= 25 °C
Non-repetitive
P
RSM
- Surge Reverse Power - W
P
RSM
t
T
100
NNCD [ ] C
10
1
1
µ
10
µ
100
µ
1m
10 m
100 m
t
T
- Pulse Width - s
4
NNCD3.3C to NNCD12C
Sample Application Circuits
Set
Note
Conecter
Micro
com.
PC
(CD ROM)
Palallel
Interface
Interface Cable
Note
Set
Printer, P.D.C, T.V Game etc.
5
Embedded System
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