DSEI 12-12AZ
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V
1200
V
RRM
V
1200
DSEI 12-12AZ
Type
I
FAV
= 11 A
V
RRM
= 1200 V
t
rr
= 50 ns
TO-263 AA
1
3
4
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 100°C; rectangular, d = 0.5
t
p
< 10 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
25
11
150
75
80
65
70
28
27
21
20
-40...+150
150
-40...+150
A
A
A
A
A
A
2
s
A
2
s
°C
°C
°C
Nm
W
g
Features
• International standard package
JEDEC TO-263 AB
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
M
d
P
tot
Weight
Symbol
I
R
mounting torque
T
C
= 25°C
typical
Conditions
V
R
= V
RRM
V
R
= 0.8·V
RRM
V
R
= 0.8·V
RRM
I
F
= 12 A
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
T
VJ
= 25°C
0.4...0.6
78
2
Characteristic Values
typ.
max.
250
150
4
2.2
2.6
1.65
46.2
1.6
0.25
µA
µA
mA
V
V
V
mW
K/W
K/W
ns
A
V
F
V
T0
r
T
R
thJC
R
thCH
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 12 A; -di
F
/dt = 100 A/µs
L < 0.05 µH; T
VJ
= 100°C
50
6.5
70
7.2
I
FAVM
rating includes reverse blocking losses at T
VJM
. V
R
= 0.8·V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20140129b
© 2014 IXYS All rights reserved
1-3
DSEI 12-12AZ
Dimensions TO-263 AB
Dim.
W
E
L1
c2
A
Supplier
Option
D
A1
4
1
3
e1
2x e
L
c
2x b2
10.92
(0.430)
2x b
E1
D2
A2
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
mm (Inches)
Millimeter
Inches
min
max
min
max
4.06
4.83
0.160 0.190
typ. 0.10
typ. 0.004
2.41
0.095
0.51
0.99
0.020 0.039
1.14
1.40
0.045 0.055
0.40
0.74
0.016 0.029
1.14
1.40
0.045 0.055
8.38
9.40
0.330 0.370
8.00
8.89
0.315 0.350
2.3
0.091
9.65
10.41 0.380 0.410
6.22
8.50
0.245 0.335
2,54 BSC
0,100 BSC
4.28
0.169
14.61 15.88 0.575 0.625
1.78
2.79
0.070 0.110
1.02
1.68
0.040 0.066
typ.
typ.
0.040
0.002
0.02
0.0008
H
D1
3.05
(0.120)
9.02
(0.355)
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
Recommended min. foot print
IXYS reserves the right to change limits, test conditions and dimensions.
20140129b
© 2014 IXYS All rights reserved
2-3
DSEI 12-12AZ
30
3.0
2.5
20
2.0
T
VJ
= 100°C
V
R
= 540 V
max
30
25
20
T
VJ
= 100°C
V
R
= 540 V
I
F
= 11 A
22 A
11 A
5.5 A
max
I
F
[A]
10
T
VJ
= 150°C
100°C
25°C
Q
r
1.5
[μ C ]
1.0
0.5
I
F
= 11 A
22 A
11 A
5.5 A
I
R M
15
typ.
[A ]
10
5
typ.
0
0
1
2
3
0.0
1
10
100
1000
0
0
100
200
300
400
V
F
[V ]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
1.0
-d i
F
/d t [A /μ s ]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
1.0
-d i
F
/d t [A /μ s ]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
60
50
40
1200
1000
800
T
VJ
= 125°C
I
F
= 11 A
t
fr
V
FR
0
100
200
300
0.8
T
VJ
= 100°C
V
R
= 540 V
K
f
0.8
0.6
0.4
0.2
I
RM
Q
r
t
rr
0.6
max
[n s ]
0.4
0.2
I
F
= 11 A
22 A
11 A
5.5 A
t
fr
600
V
F R
30
[V ]
20
10
[μ s ]
400
200
0
400
typ.
0
40
80
120
160
0.0
0
100
200
300
400
0
T
V J
[°C ]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
-d i
F
/d t [A /μ s ]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
d i
F
/d t [A /μ s ]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
1.6
1.2
Z
thJ C
0.8
[k/W ]
0.4
0.0
0.001
0.01
0.1
t [s ]
1
10
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20140129b
© 2014 IXYS All rights reserved
3-3
Microcontroller MCU
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