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DSEI8-06AS

Description
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size184KB,3 Pages
ManufacturerIXYS
Environmental Compliance  
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DSEI8-06AS Overview

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3

DSEI8-06AS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeD2PAK
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, SNUBBER DIODE
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Maximum non-repetitive peak forward current95 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation50 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
DSEI 8-06A
DSEI 8-06AS
Fast Recovery
Epitaxial Diode (FRED)
I
FAV
= 8 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
640
640
V
RRM
V
600
600
Type
A
C
TO-220 AC
DSEI 8-06A
C
A
DSEI 8-06A
DSEI 8-06AS
TO-263 AB
DSEI 8-06AS
C
NC
A = Anode, C = Cathode,
NC = No Connection,
TAB = Cathode
A
C (TAB)
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 115°C; rectangular, d = 0.5
t
p
< 10 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
16
8
130
100
110
85
95
50
50
36
37
-40...+150
150
-40...+150
A
A
A
A
A
A
2
s
A
2
s
°C
°C
°C
W
Nm
g
Features
• International standard package
JEDEC TO-220 AC & TO-283 AB
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Symbol
T
C
= 25°C
mounting torque
typical
Conditions
50
0.4...0.6
2
Characteristic Values
typ.
max.
20
10
1.5
1.3
1.5
0.98
28.7
2.5
0.5
60
µA
µA
mA
V
V
V
mΩ
K/W
K/W
K/W
ns
A
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
I
R
V
R
= V
RRM
V
R
= 0.8·V
RRM
V
R
= 0.8·V
RRM
I
F
= 8 A
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
T
VJ
= 25°C
V
F
V
T0
r
T
R
thJC
R
thCH
R
thJA
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 350 V; I
F
= 8 A; -di
F
/dt = 64 A/µs
L < 0.05 µH; T
VJ
= 100°C
35
2.5
50
2.8
I
FAVM
rating includes reverse blocking losses at T
VJM
. V
R
=
0.8·V
RRM
,
duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20090106a
© 2009 IXYS All rights reserved
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