RBV5000_05 datasheet, PDF - EEWORLD Datasheet

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RBV5000_05: DescriptionSILICON BRIDGE RECTIFIERS; File Size41KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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RBV5000_05 Overview

SILICON BRIDGE RECTIFIERS

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RBV5000 - RBV5010

PRV : 50 - 1000 Volts

Io : 50 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

High case dielectric strength of 2000 V

Ideal for printed circuit board

Very good heat dissipation

Pb / RoHS Free

SILICON BRIDGE RECTIFIERS

RBV25

3.9

0.2

0.3

4.9

0.2

∅

3.2

0.1

0.3

13.5

0.3

~ ~

0.2

1.0

0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 8.17 grams ( Approximaly )

10 7.5 7.5

±0.2 ±0.2 ±0.2

2.0

0.2

0.7

0.1

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage per Diode at I

= 25 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

Note :

SYMBOL

RBV

5000

RBV

5001

100

RBV

5002

200

140

200

RBV

5004

400

280

400

660

1.1

200

1.5

RBV

5006

600

420

600

RBV

5008

800

560

800

17.5

0.5

RBV

5010

1000

700

1000

UNIT

µA

°C/W

°C

RRM

RMS

F(AV)

FSM

R(H)

STG

Ta = 25

°C

Ta = 100

°C

- 40 to + 150

1. Thermal Resistance from junction to case with units mounted on heatsink.

Page 1 of 2

Rev. 03 : September 9, 2005

RBV5000_05 Related Products

	RBV5000_05	RBV5000	RBV5002	RBV5004	RBV5001	RBV5008	RBV5006	RBV5010
Description	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
package instruction	-	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	-	compli	compli	compli	compli	compli	compli	compli
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Minimum breakdown voltage	-	50 V	200 V	400 V	100 V	800 V	600 V	1000 V
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	-	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	-	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	-	4	4	4	4	4	4	4
Phase	-	1	1	1	1	1	1	1
Number of terminals	-	4	4	4	4	4	4	4
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	-	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	50 V	200 V	400 V	100 V	800 V	600 V	1000 V
surface mount	-	NO	NO	NO	NO	NO	NO	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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