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S2D

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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S2D Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE

S2D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionSMB, 2 PIN
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
S2A ~ S2M
PRV : 50 - 1000 Volts
Io : 1.5 Ampere
FEATURES :
*
*
*
*
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
Case : SMB Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Indicated by cathode band
Mounting position : Any
Weight : 0.093 gram
SURFACE MOUNT RECTIFIERS
SMB (DO-214AA)
1.1
±
0.3
5.4
±
0.15
4.8
±
0.15
2.0
±
0.1
3.6
±
0.15
2.3
±
0.2
0.22
±
0.07
MECHANICAL DATA :
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current (See fig. 1)
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method) T
L
= 100
°C
Maximum Instantaneous Forward Voltage at I
F
= 1.5 A.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 125
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F
I
FSM
V
F
I
R
I
R(H)
Trr
R
θ
JA
R
θ
JL
C
J
T
J
T
STG
S2A
50
35
50
S2B
100
70
100
S2D
200
140
200
S2G
400
280
400
1.5
50
1.15
1.0
125
2.0
100
20
30
S2J
600
420
600
S2K
800
560
800
S2M
1000
700
1000
UNIT
V
V
V
A
A
V
µA
µA
µs
°C/W
°C/W
pF
°C
°C
Typical Reverse Recovery Time (Note 1)
Typical thermal resistance (Note 2)
Typical Junction Capacitance at 4.0V, 1 MHz (Note 3)
Junction Temperature Range
Storage Temperature Range
Notes :
- 55 to + 150
- 55 to + 150
(1) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
(3) Mesured at 1.0 Mhz and applied Vr=4.0 volts
Page 1 of 2
Rev. 02 : March 25, 2005

S2D Related Products

S2D S2A S2B S2A_05 S2J S2G S2K S2M
Description 1.5 A, 200 V, SILICON, RECTIFIER DIODE NKK SWITCHES - S2A - SWITCH; TOGGLE; SPDT; 20A; 250VAC FAIRCHILD SEMICONDUCTOR - S2B - STANDARD DIODE; 2A; 100V; DO-214AA NKK SWITCHES - S2A - SWITCH; TOGGLE; SPDT; 20A; 250VAC 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 1000 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free - Lead free Lead free - Lead free
Is it Rohs certified? conform to conform to conform to - conform to conform to - conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors]
package instruction SMB, 2 PIN SMB, 2 PIN R-PDSO-C2 - SMB, 2 PIN SMB, 2 PIN - SMB, 2 PIN
Reach Compliance Code compli compliant compli - compli compli - compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON - SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V - 1.1 V 1.1 V - 1.1 V
JEDEC-95 code DO-214AA DO-214AA DO-214AA - DO-214AA DO-214AA - DO-214AA
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2
Maximum non-repetitive peak forward current 60 A 60 A 60 A - 60 A 60 A - 60 A
Number of components 1 1 1 - 1 1 - 1
Phase 1 1 1 - 1 1 - 1
Number of terminals 2 2 2 - 2 2 - 2
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C - 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C - -55 °C -55 °C - -55 °C
Maximum output current 2 A 2 A 2 A - 2 A 2 A - 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Maximum repetitive peak reverse voltage 200 V 50 V 100 V - 600 V 400 V - 1000 V
Maximum reverse current 5 µA 5 µA 5 µA - 5 µA 5 µA - 5 µA
surface mount YES YES YES - YES YES - YES
Terminal form C BEND C BEND C BEND - C BEND C BEND - C BEND
Terminal location DUAL DUAL DUAL - DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED

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