IVEC
ELECTRON DEVICE
AdLib OCR
SHEET
DATA
Evaluation
SILICON TRANSISTOR
GN1F4N
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
PACKAGE DIMENSIONS
in millimeters
1 .25±0.1
j
+
C5
C5
+1 M
N
U:~
Ci
z
p
2.1+0 .1
FEATURES
a Resistors Built-in TYPE
C
RI
2
1
R2
Rl = 22 k~2
R2 = 47 kQ
E
+
3
do
+
7
Complementary to GAII F4N
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (Ta 25 OC)
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Base Voltage
Emitter to
VEBO
IC
Collector Current (DC)
IC
Collector Current (Pulse)
Maximum Power Dissipation
Total Power Dissipation
at 25 OC Ambient Temperature
PT
Maximum Temperatures
Junction Temperature
Tj
Storage Temperature Range
Tstg
-60
-50
-5
-100
-200
V
V
V
mA
mA
Marking
-H
2 Base
3 : Collector
0
1 Emitter
C5
2
Marking: M35
150
150
-55 to +156
mw
0C
"C
ELECTRICAL CHARACTERISTICS (T,= 250C)
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Low-Level Input Voltage
High-Level Input Voltage
Input Resistor
E-B Resistor
Turn-on Time
Storage Time
SYMBOL
ICBO
hFE1*
hFE2*
VCE(sat)*
VIL*
VIH*
Rl
R2
ton
tstg
-3 .0
15 .4
32 .9
85
95
150
200
-0 .04
-0.85
-1 .3
22 .0
47 .0
0.2
1 .5
1
1
2.0
1
28 .6
61 .1
0.3
5-0
6.0
-0.2
-0 .6
V
V
V
k12
k92
us
ps
us
VCC = -5 V, Vin = -5 V
RL= 1 kE2
MIN.
TYP.
MAX.
-100
340
UNIT
nA
TEST CONDITIONS
VCB = -50 V, IE
VCE = -5.0 V, IC
VCE = -5 .0 V, IC
IC = -5.0 mA, 113
VCE = -5 .0 V, IC
VCE = -0.2 V, IC
0
-5 .0 mA
-50 mA
-0 .25 MA
-100 AA
-5 .0 mA
Turn -OTT Time
I toff
PW = 2 jus, Duty Cycle ;5 2 %
Pulsed : PW -S350 gs, Duty Cycle f--2 %
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
@ NEC Corporation 1988
GN1 F4N
TYPICAL
CHARACTERISTICS
AdLib OCR Evaluation
(Ta = 25 'C)
vs .
IVECELECTFtON DEVICE
200
1801
TOTAL POWER DISSIPATION
AMBIENT TEMPERATURE
-50
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
-200
-180
-160
-140
0
E
I
0
cL
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160 180
Ta -Ambient Temperature -*C
0
-40
30
120 -
o
0.
-20
_80 -
-60 -
-10
#
-4 0
IB= -20 gA
0
-2 .0
-4 .0
-6 .0
-8 .0
VCE-COllectOr to Emitter Voltage-V
DC CURRENT GAIN
COLLECTOR CURRENT
-10
-1 .0
>
_0 .8
>
uj
-0 .4
COLLECTOR TO EMITTER VOLTAGE vs .
COLLECTOR CURRENT
1000
500
200
100
50
0
Vi~= -5 V
1
-10
0
Uj
U_
uj
0
>
-0 .2
20
10
-1
0
-10
IC-Collector Current-mA
-20
-30
-40
-50
-2
IC-Collector Current-mA
-5
-10
-20
-50
-100
_L0
Q,
OD
M
0
c
0
-0 .2
COLLECTOR SATURATION VOLTAGE vs .
COLLECTOR CURRENT
i
I
I
I I
-50
INPUT VOLTAGE vs .
COLLECTOR CURRENT
-0 .5
-20
-10
-0 .1
C)
0
-0 .05
5 .0
I
>
-2 .0
-1 .0
LLL
0
Ta=25 T
A
-OD2
-0 .01
-1 .0
-2 .0
-5D
IC-Collector Current-mA
-10
-20,
-50
100
-0~5
_1~0
-2 .0
-5D
-10
-20
-50
IC-Collector Current-mA
2
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