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SZ60D0

Description
SURFACE MOUNT SILICON ZENER DIODES
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

SZ60D0 Overview

SURFACE MOUNT SILICON ZENER DIODES

SZ60D0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance480 Ω
Number of components1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation5 W
Nominal reference voltage200 V
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance10%
Working test current5 mA
Certificate: TH97/10561QM
Certificate:
TW00/17276EM
SZ603D - SZ60D0
V
Z
: 3.3 - 200 Volts
P
D
: 5 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
SURFACE MOUNT SILICON
ZENER DIODES
SMB (DO-214AA)
1.1 ± 0.3
5.4 ± 0.15
4.8 ± 0.15
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
MECHANICAL DATA
* Case : SMB (DO-214AA) Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead formed for Surface mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.093 gram
Dimensions in millimeters
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at T
L
= 75
°C
(Note1)
Maximum Forward Voltage at I
F
= 1.0 A
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
T
J
Ts
Value
5.0
1.2
- 55 to + 150
- 55 to + 150
Unit
W
V
°C
°C
Note :
2
(1) T
L
= Lead temperature at 6.0 mm ( 35 micron thickness ) copper land areas
Fig. 1 POWER TEMPERATURE DERATING CURVE
5
P
D
, MAXIMUM DISSIPATION
(WATTS)
4
3
2
6.0 mm
2
( 35 micron thickness )
copper land areas.
1
0
0
25
50
75
100
125
150
175
T
L,
LEAD TEMPERATURE (
°
C)
Page 1 of 2
Rev. 04 : March 16, 2007
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