FII30-12D datasheet, PDF - EEWORLD Datasheet

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FII30-12D: DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5; CategoryDiscrete semiconductor The transistor; File Size48KB，2 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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FII30-12D Overview

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5

FII30-12D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Littelfuse
package instruction	IN-LINE, R-PSIP-T5
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSIP-T5
JESD-609 code	e1
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	570 ns
Nominal on time (ton)	175 ns

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Advanced Technical Information

Fast IGBT Chopper

in ISOPLUS i4-PAC

FII 30-12D

C25

CES

CE(sat) typ.

= 30 A

= 1200 V

= 2.3 V

IGBT

Symbol

CES

GES

C25

C90

CEK

(SCSOA)

tot

= 25°C

= 90°C

15 V; R

= 82

Ω;

= 125°C

RBSOA, Clamped inductive load; L = 100 µH

= V

CES

; V

15 V; R

= 82

Ω;

= 125°C

non-repetitive

= 25°C

Conditions

= 25°C to 150°C

Maximum Ratings

1200

CES

125

µs

Features

• NPT IGBT

- low saturation voltage

- no latch up

- positive temperature coefficient for

easy paralleling

• HiPerFRED

diode

- fast reverse recovery

- low operating forward voltage

- low leakage current

• ISOPLUS i4-PAC

package

- isolated back surface

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- industry standard outline

Applications

• single phaseleg

- buck-boost chopper

• H bridge

- power supplies

- induction heating

- four quadrant DC drives

- controlled rectifier

• three phase bridge

- AC drives

- controlled rectifier

Symbol

Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min.

typ. max.

2.3

2.6

4.5

0.9

200

100

500

3.0

2.4

1000

3.0

6.5

0.9

1.0 K/W

CE(sat)

GE(th)

CES

GES

d(on)

d(off)

off

ies

Gon

thJC

= 20 A; V

= 15 V; T

= 25°C

= 125°C

= 0.6 mA; V

= V

CES

; V

= 0 V; T

= 25°C

= 125°C

= 0 V; V

20 V

Inductive load, T

= 125°C

= 600 V; I

= 20 A

= ±15 V; R

= 82

Ω

= 25 V; V

= 0 V; f = 1 MHz

= 600V; V

= 15 V; I

= 18 A

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

1-2

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

039

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